DRAM Chip | Breaking Cybersecurity News | The Hacker News

Remember rowhammer vulnerability? A critical issue affecting modern DRAM (dynamic random access memory) chips that could allow attackers to obtain higher kernel privileges on a targeted system by repeatedly accessing memory cells and induce bit flips. To mitigate Rowhammer vulnerability on the latest DDR4 DRAM, many memory chip manufacturers added some defenses under the umbrella term Target Row Refresh (TRR) that refreshes adjacent rows when a victim row is accessed more than a threshold. But it turns out 'Target Row Refresh,' promoted as a silver bullet to mitigate rowhammer attacks, is also insufficient and could let attackers execute new hammering patterns and re-enable the bit-flip attacks on the latest hardware as well. TRRespass: The Rowhammer Fuzzing Tool Tracked as CVE-2020-10255 , the newly reported vulnerability was discovered by researchers at VUSec Lab, who today also released ' TRRespass ,' an open source black box many-sided RowHammer fuzzin

A team of cybersecurity researchers yesterday revealed details of a new side-channel attack on dynamic random-access memory (DRAM) that could allow malicious programs installed on a modern system to read sensitive memory data from other processes running on the same hardware. Dubbed RAMBleed and identified as CVE-2019-0174 , the new attack is based on a well-known class of DRAM side channel attack called Rowhammer , various variants [ GLitch , RAMpage , Throwhammer ,  Nethammer , Drammer ] of which have been demonstrated by researchers in recent years. Known since 2012, Rowhammer bug is a hardware reliability issue that was found in the new generation of DRAM chips. It turned out that repeatedly and rapidly accessing (hammering) a row of memory can cause bit flips in adjacent rows, i.e., changing their bit values from 0 to 1 or vice-versa. In the following years, researchers also demonstrated successful exploits to achieve privilege escalation on the vulnerable computers by

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A team of security researchers has discovered a new set of techniques that could allow hackers to bypass all kind of present mitigations put in place to prevent DMA-based Rowhammer attacks against Android devices. Dubbed RAMpage , the new technique (CVE-2018-9442) could re-enable an unprivileged Android app running on the victim's device to take advantage from the previously disclosed Drammer attack , a variant of DRAM Rowhammer  hardware vulnerability for Android devices, in an attempt to gain root privileges on the target device. You might have already read a few articles about RAMpage on the Internet or even the research paper, but if you are still unable to understand— what the heck is RAMpage —we have briefed the research in language everyone can understand. Before jumping directly on the details of RAMpage, it is important for you to understand what is RowHammer vulnerability, how it can be exploited using Drammer attack to hack Android devices and what mitigations G

Exploitation of Rowhammer attack just got easier. Dubbed ' Throwhammer ,' the newly discovered technique could allow attackers to launch Rowhammer attack on the targeted systems just by sending specially crafted packets to the vulnerable network cards over the local area network. Known since 2012, Rowhammer is a severe issue with recent generation dynamic random access memory (DRAM) chips in which repeatedly accessing a row of memory can cause "bit flipping" in an adjacent row, allowing anyone to change the contents of computer memory. The issue has since been exploited in a number of ways to achieve remote code execution on the vulnerable computers and servers. Just last week, security researchers detailed a proof-of-concept Rowhammer attack technique, dubbed GLitch , that leverages embedded graphics processing units (GPUs) to carry out Rowhammer attacks against Android devices. However, all previously known Rowhammer attack techniques required privilege escal

With Launch of Galaxy S6 and Galaxy S6 Edge , Samsung was the first one to bring 4GB RAM access in the Android mobile phones; with Samsung Note 5 and the current OnePlus 2 carrying the same RAM capacity. Now, today Samsung has again taken the technology a step further with the launch of 12GB LPDDR4 ( low power, double data rate 4 ) DRAM Chip that will offer 6GB RAM for the upcoming Next Generation Smartphones and tablets. The latest DRAM chip version 12 comes with such technology that accelerates: Advanced 20-nanometer (nm) Process Technology 30% fast speed than the previous 8GB LPDDR4 20% Less energy consumption Increased Manufacturing productivity to 50% The next generation mobile phones are supposed to be equipped with the new mobile DRAM chip enabling increased capacity and fastest speed with simultaneously providing essentials (for building a smarter mobile device) such as: Excellent energy efficiency Reliability Ease of design Smooth multitasking Better pe