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Category — DRAM
New ZenHammer Attack Bypasses RowHammer Defenses on AMD CPUs

New ZenHammer Attack Bypasses RowHammer Defenses on AMD CPUs

Mar 28, 2024 Hardware Security / Vulnerability
Cybersecurity researchers from ETH Zurich have developed a new variant of the RowHammer DRAM (dynamic random-access memory) attack that, for the first time, successfully works against AMD Zen 2 and Zen 3 systems despite mitigations such as Target Row Refresh (TRR). "This result proves that AMD systems are equally vulnerable to Rowhammer as Intel systems, which greatly increases the attack surface, considering today's AMD market share of around 36% on x86 desktop CPUs," the researchers  said . The technique has been codenamed  ZenHammer , which can also trigger RowHammer bit flips on DDR5 devices for the first time. RowHammer , first publicly disclosed in 2014, is a  well-known attack  that exploits DRAM's memory cell architecture to alter data by repeatedly accessing a specific row (aka hammering) to cause the electrical charge of a cell to leak to adjacent cells. This can induce random bit flips in neighboring memory rows (from 0 to 1, or vice versa), which can...
New Blacksmith Exploit Bypasses Current Rowhammer Attack Defenses

New Blacksmith Exploit Bypasses Current Rowhammer Attack Defenses

Nov 16, 2021
Cybersecurity researchers have demonstrated yet another variation of the Rowhammer attack affecting all  DRAM  (dynamic random-access memory) chips that bypasses currently deployed mitigations, thereby effectively compromising the security of the devices. The new technique — dubbed " Blacksmith " ( CVE-2021-42114 , CVSS score: 9.0) — is designed to trigger bit flips on target refresh rate-enabled DRAM chips with the help of novel "non-uniform and frequency-based" memory access patterns, according to a study jointly published by academics from ETH Zurich, Vrije Universiteit Amsterdam, and Qualcomm Technologies. Originally disclosed in 2014,  Rowhammer  refers to a fundamental hardware vulnerability that could be abused to alter or corrupt memory contents by taking advantage of DRAM's tightly-packed, matrix-like memory cell architecture to repeatedly access certain rows (aka "aggressors") that induces an electrical disturbance large enough to cause t...
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